Abstract Submission Guidelines
Please use the following template when preparing your extended abstract. Abstracts should be 2-3 pages in length. A cover page must include the name, address, telephone number, and e-mail address of the contact author. Please be sure also to include a list of 3-6 key words in the appropriate section at the end of the abstract. Your abstract should include at least one figure and/or table presenting data. If accepted, your abstract will appear as-submitted in the final program / extended abstract book. Please note there will be no hardbound conference proceedings this year. E-mail the abstract to Erik Secula, erik.secula@nist.gov no later than December 15, 2023.
Author Notification
Notifications regarding acceptances will be sent via e-mail by late December-early January.
Topics
The FCMN will bring together scientists and engineers interested in all aspects of the characterization technology needed for nanoelectronic materials and device research, development, integration, and manufacturing. All approaches are welcome: chemical, physical, electrical, magnetic, optical, in situ, and real-time control and monitoring. The semiconductor industry is evolving rapidly: the conference will highlight major issues and provide critical reviews of important materials and structure characterization and nearline/inline metrology methods, including hardware, data analysis, and AI and machine learning, as the industry both extends the technology deep into the nanoscale and increases the diversity of devices and systems.
The conference consists of formal invited presentation sessions and poster sessions for contributed papers. The poster papers cover new developments in materials and structure characterization/metrology down to the nanoscale. The conference began in 1995, and this meeting is the 14th in the series.
Papers are solicited to address materials and device characterization and metrology in the following areas:
- 3D IC Analysis / Metrology
- III-V on Si for Advanced CMOS
- Alternative Gate Dielectrics
- Channel Engineering
- CMOS, Extreme CMOS, Beyond CMOS
- Critical Analytical Techniques
- Defects
- Device Manufacturing
- Diagnostics
- Electron Microscopy
- Embedded or Buried Interfaces
- Flexible Microelectronics
- Graphene and 2D Materials and Devices
- Heterogeneous Integration
- Hybrid Metrology
- Hybrid Structures
- In Situ, Real-Time Control and Monitoring
- Integrated Metrology
- Interconnects
- Internet of Things
- Lab-on-a-Chip
- Lithography
- Machine Learning/AI to Enhance Characterization/Metrology
- Magnetics
- MEMS/NEMS Metrology Applications
- Modeling/Simulation
- More than Moore
- Nanoelectronics Materials and Devices
- Nanoscale Electrical and Optical Measurements
- Non-Destructive Atomic-Scale Methods
- Novel Measurement Methods, Breakthroughs
- Organic Electronics
- Reliability
- RAM
- Si Photonics
- Spectroscopic Properties for Novel Materials for Nanoelectronics; Spintronics
- Synchrotron and Neutron Techniques
- Thin-Films; Ultra-Shallow Junctions
- Wafer Manufacturing and New Substrate Materials