Overview
The FCMN will bring together scientists and engineers interested in all aspects of the characterization technology needed for nanoelectronic materials and device research, development, integration, and manufacturing. All approaches are welcome: chemical, physical, electrical, magnetic, optical, in situ, and real-time control and monitoring. The semiconductor industry is evolving rapidly: the conference will highlight major issues and provide critical reviews of important materials and structure characterization and nearline/inline metrology methods, including hardware, data analysis, and AI and machine learning, as the industry both extends the technology deep into the nanoscale and increases the diversity of devices and systems.
The conference consists of formal invited presentation sessions and poster sessions for contributed papers. The poster papers cover new developments in materials and structure characterization/metrology down to the nanoscale. The conference began in 1995, and this meeting is the 14th in the series.
Testimonials
“There were a total of 34 talks and 81 poster presentations that summarized major issues and provided critical reviews of crucial semiconductor developments and techniques needed as the industry evolves to silicon nanoelectronics and beyond.”
-Alex Braun, “A Jaunt Through Nanotechnopolis,” Semiconductor International.
“If you want to meet, greet, and learn from the world‘s experts in metrology, this is the place to be.”
-Dan Hutcheson, The Chip Insider.
Technical Program
The Technical Program is now available.
Program Co-Chairs
- J. Alexander Liddle, NIST
- Alain Diebold, University at Albany
- Markus Kuhn, Rigaku
- Zhiyong Ma, Intel
- Paul van der Heide, IMEC
Invited Speakers
- Matthew Andrew, Carl Zeiss X-ray Microscopy
- Umberto Celano, imec
- Arie den Boef, ASML
- Marla Dowell, National Institute of Standards and Technology
- Rafel Dunin-Borkowski, Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons
- Claudia Fleischmann, Imec
- Eugen Foca, Carl Zeiss SMT GmbH
- Guillaume Freychet, CEA Leti
- Nicolas Gauquelin, Univ. Antwerp EMAT
- Rick Gottscho, LAM Research
- Rudolf Haindl, Max Planck Institute
- Matt Hetterman, EUVTech
- Dan Hutcheson, VLSI Research, Inc.
- Byoungho Lee, Hitachi High-Tech Corporation
- Tony Levi, Univ. of Souther California
- Xiaoqin (Elaine) Li, University of Texas-Austin
- Yan Li, Samsung
- Kazuhiko Omote, Rigaku
- Colin Ophus, Lawrence Berkeley Laboratory
- Jonghyeok Park, Samsung Electronics
- Amanda Petford-Long, Argonne National Lab
- Christina Porter, ASML
- Michael Reisinger, Infineon
- Hamed Sadeghian, Nearfield Instruments
- Siamak Salimy, Hprobe
- Kento Sasaki, Univ. of Tokyo
- Daniel Schmidt, IBM
- Nigel Smith, Nanometrics
- Pooya Tadayon, Intel
- Eric Van Cappellen, Thermo Fisher Scientific
- Shay Wolfling, Nova
- Zhenxin Zhong, TFS